inchange semiconductor product specification silicon pnp power transistors 2SA814 2sa815 description with to-220 package fig.1 simplified outline (to-220) and symbol complement to type 2sc1624/1625 high breakdown voltage applications medium power amplifier applications driver stage amplifier applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit 2SA814 -120 v cbo collector-base voltage 2sa815 open emitter -100 v 2SA814 -120 v ceo collector-emitter voltage 2sa815 open base -100 v v ebo emitter-base voltage open collector -5 v i c collector current -1 a i e emitter current 1 a p c collector power dissipation t c =25 15 w t j junction temperature 150 t stg storage temperature -55~150
inchange semiconductor product specification silicon pnp power transistors 2SA814 2sa815 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit 2SA814 -120 v (br)ceo collector-emitter breakdown voltage 2sa815 i c =-10ma ,i b =0 -100 v v (br)ebo emitter-base breakdown voltage i e =-1.0ma ,i c =0 -5 v v cesat collector-emitter saturation voltage i c =-500ma; i b =-50ma b -0.5 v v be base-emitter on voltage i c =-500ma ; v ce =-5v -1.0 v i cbo collector cut-off current v cb =-50v; i e =0 -1.0 a i ebo emitter cut-off current v eb =-5v; i c =0 -1.0 a h fe-1 dc current gain i c =-150ma ; v ce =-5v 70 240 h fe-2 dc current gain i c =-500ma ; v ce =-5v 40 c ob collector output capacitance i e =0 ; v cb =-10v;f=1mhz 30 pf f t transition frequency i c =-150ma ; v ce =-5v 10 30 mhz ? h fe- 1 classifications o y 70-140 120-240 2
inchange semiconductor product specification silicon pnp power transistors 2SA814 2sa815 package outline fig.2 outline dimensions(unindicated tolerance: 0.10 mm) 3
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